 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DS 110 DSA 110 DSI 110 DSAI 110 Rectifier Diodes Avalanche Diodes V RSM V 900 1300 1300 1700 1900 V(BR)min x V R R M V V 800 1200 DS DS DSA DSA DSA Anode on stud 110-08F 110-12F 110-12F 110-16F 110-18F Cathode on DSI DSI DSAI DSAI DSAI stud 110-08F 110-12F 110-12F 110-16F 110-18F VRRM = 800 - 1800 V IF(RMS) = 250 A IF(AV)M = 160 A DO-205 AC C A DS DSA A C DSI DSAI 1300 1200 1750 1600 1950 1800 x Only for Avalanche Diodes Symbol I F(RMS) IF(AV)M P RSM I FSM Test Conditions Maximum 250 160 35 3150 3380 2800 3000 Ratings A A kW A A A A A2s A2 s A2s A2 s C C C Nm lb.in. g Values T(vj) = T(vj)m Tcase = 100C; 180 sine DSA(I) types, T(vj) = T(vj)m, tp = 10 s T(vj) = 45C; VR = 0 T(vj) = T(vj)m VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine A = Anode C = Cathode M12 Features International standard package, JEDEC DO-205 AC (~DO30) Planar glassivated chips q q I 2 t T(vj) = 45C VR = 0 T(vj) = T(vj)m VR = 0 49 600 48 000 39 200 37 800 -40...+180 180 -40...+180 Applications High power rectifiers DC supplies Field supply for DC motors Power supplies q q q q q q q T (vj) T (vj)m T stg Md Weight Symbol I R q Mounting torque 16-20 142-177 130 Characteristic 10 1.4 0.85 1.1 0.35 0.39 0.45 4.25 4.25 100 Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits mm (1 mm Dimensions in = 0.0394") Test Conditions T(vj) = T(vj)m; VR = VRRM IF = 500 A; T(vj) = 25C mA V V m K/W K/W K/W mm mm m/s2 VF V T0 rT RthJC RthJH dS dA a For power-loss calculations only T(vj) = T(vj)m DC current 180 sine DC current Creepage distance on surface Strike distance through air Max. allowable acceleration Data according to IEC 747-2 IXYS reserves the right to change limits, test conditions and dimensions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 DS 110 DSA 110 600 typ. A 500 IF 400 T(vj)= 180C T(vj)= 25C IFSM lim. A 1500 2000 50Hz, 80%VRRM T(vj) = 45C It 4 300 1000 T(vj) = 180C 2 DSI 110 DSAI 110 105 A2s 6 T(vj) = 45C VR = 0 V T(vj) = 180C 2 200 500 100 0 0.0 0.5 1.0 VF 1.5 V 2.0 0 10-3 104 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms10 89 t Fig. 1 300 W Forward characteristics Fig. 2 Surge overload current IFSM: Crest value, t: duration Fig. 3 200 I2t versus time (1-10 ms) RthJA : PF 200 0.36 K/W 0.7 K/W 1.3 K/W A 150 IF(AV)M 100 100 DC 180 sin 120 60 30 50 0 0 50 100 150 IF(AV)M A 200 20 40 60 80 100 120 140 160 180 0 C Tamb 0 0 40 80 120 160 C 200 Tcase Fig. 4 0.8 K/W 0.6 ZthJH Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 180 sine RthJH for various conduction angles d: 30 60 120 180 DC d DC 180 120 60 30 RthJH (K/W) 0.45 0.516 0.567 0.660 0.733 0.4 Constants for ZthJH calculation: 0.2 i 1 2 3 4 Rthi (K/W) 0.06713 0.06242 0.22045 0.10 ti (s) 0.003 0.094 3.846 3.2 0.0 10-3 10-2 10-1 100 101 102 103 s t 104 Fig. 6 Transient thermal impedance junction to heatsink IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
Price & Availability of DS110-08F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |